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| SI9925DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.05 @ VGS = 4.5 V 20 0.06 @ VGS = 3.0 V 0.08 @ VGS = 2.5 V ID (A) 5.0 4.2 3.6 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: SI9925DY SI9925DY-T1 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 20 "12 5.0 4.0 48 1.7 2 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70145 S-03950--Rev. N, 26-May-03 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 SI9925DY Vishay Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 10 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 5 V VGS = 7.2 V, ID = 5.0 A VGS = 4.5 V, ID = 5.0 A Drain-Source On-State Drain Source On State Resistanceb rDS(on) VGS = 3.0 V, ID = 3.9 A VGS = 2.5 V, ID = 1 A Forward Transconductanceb gfs VSD VDS = 10 V, ID = 5.0 A IS =5.0 A, VGS = 0 V 30 0.025 0.038 0.041 0.050 0.062 14 0.81 1.2 0.045 0.05 0.06 0.08 S V W 0.8 "100 1 5 V nA mA A Symbol Test Condition Min Typa Max Unit Diode Forward Voltageb Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 5.0 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 1 14 13 35 9 60 VDS = 6 V, VGS = 4.5 V, ID = 5.0 A 9 2 2.6 2.9 40 30 60 30 150 ns W 20 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 70145 S-03950--Rev. N, 26-May-03 SI9925DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 40 TC = - 55_C 32 I D - Drain Current (A) VGS = 5.5, 5, 4.5, 4, 3.5 V I D - Drain Current (A) 32 25_C 24 3V 24 125_C 16 Transfer Characteristics 16 2.5 V 8 2V 1.5 V 8 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1600 Capacitance r DS(on) - On-Resistance ( ) 0.16 1200 0.12 C - Capacitance (pF) Ciss 800 0.08 VGS = 2.5 V VGS = 3 V 400 Crss 0 Coss 0.04 VGS = 4.5 V 0.00 0 6 12 18 24 30 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 4.0 V GS - Gate-to-Source Voltage (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 0.0 - 50 r DS(on) - On-Resistance ( ) (Normalized) VDS = 6 V ID = 5 A 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5 A 1.2 0.8 0.4 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70145 S-03950--Rev. N, 26-May-03 www.vishay.com 3 SI9925DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.18 On-Resistance vs. Gate-to-Source Voltage 0.15 r DS(on) - On-Resistance ( ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C ID = 5 A 0.12 0.09 0.06 0.03 1 0 0.4 0.8 1.2 1.6 0.00 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 40 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 A Power (W) - 0.0 32 24 - 0.2 16 - 0.4 8 - 0.6 - 50 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70145 S-03950--Rev. N, 26-May-03 |
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